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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB825 DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SD1061 APPLICATIONS Universal high current switching as solenoid driving;high speed inverter and converter applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Base HAN INC Emitter-base voltage Collector current (DC) Collector current (Pulse) SEM GE Open base Open emitter OND IC CONDITIONS TOR UC VALUE -60 -50 -6 -7 -12 UNIT V V V A A W ae ae Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 40 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE= IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-4A; IB=-0.4A VCB=-40V;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 MIN -50 -60 -6 TYP. 2SB825 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V V V -0.4 -0.1 -0.1 280 V mA mA Switching times ton ts tf Turn-on time Storage time HAN INC Fall time SEM GE IC=2.0A; IB1=- IB2=0.2A OND IC TOR UC 0.2 0.7 0.1 10 MHz |I |I |I s s s hFE-1 classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB825 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB825 SEM GE HAN INC OND IC TOR UC 4 |
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